Add ion implantation and thermal annealing process models with a public model database - #236
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FilipovicLado wants to merge 19 commits into
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Add ion implantation and thermal annealing process models with a public model database#236FilipovicLado wants to merge 19 commits into
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New process models: - IonImplantation: wraps csImplant as a psProcess with zero duration; supports Pearson IV and Gaussian profiles, tilt angle, dose control, mask/screen materials, damage field, and optional embedded boundary reconstruction for sub-grid surface offsets on tilted interfaces - Anneal: thermal anneal solver driven by csAnneal; Arrhenius diffusivity, solid solubility capping, I/V defect coupling, transient enhanced diffusion (TED), arbitrary temperature schedules Supporting additions: - psImplantProfile, psImplantPearson, psImplantTable, psImplantDamage, psImplantParams, psImplantConstants, psImplantSetup - psAnneal, psAnnealParams, psAnnealSetup - psModelDb / psModelDbLookup / psModelNames for table-driven profile lookup - psUnits: physical unit helpers Changes to existing files: - psDomain: add withEmbeddedBoundaries parameter to generateCellSet() - psProcess: defer AUTO flux-engine resolution to apply() so callback-only and geometric models never enter the flux engine code path - viennaps.hpp: include new headers; CMakeLists.txt: install them Tests: anneal, implantProfile, ionImplant (includes embedded boundary depth test) Example: ionImplantation Co-Authored-By: Claude Sonnet 4.6 <noreply@anthropic.com>
Ga, In, As, Sb, Bi) from Pichler (2004) and Ghoshtagore (1971)
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Summary
Adds ion implantation and thermal annealing process models to ViennaPS, driven
by a bundled, literature-based model database, and building on the ViennaCS
2.1.0 anneal solver. This is the ViennaPS-side companion to the implant/anneal
kernels released in ViennaCS 2.1.0.
What this adds
Ion implantation (
psIonImplantation,psImplant*)and Hobler damage, driven from the model database by species/energy.
Thermal annealing (
psAnneal,psAnnealParams,psAnnealSetup)csAnnealsolver: intrinsic Arrheniusdiffusion, electrical activation limited by solid solubility, and an
instantaneous effective transient-enhanced-diffusion term driven by the
implant damage field. Defect coupling is enabled only when the parameters
carry defect physics.
Model database (
modeldb/,psModelDb,psModelDbLookup)dopants (B, P, Al, Ga, In, As, Sb, Bi) from Pichler (2004) and Ghoshtagore
(1971), documented in
modeldb/anneal/PROVENANCE.md. Boron and phosphorusadditionally have solid solubility, effective-TED parameters, and MCIMPL-II
crystalline implant + Hobler damage tables; the other six are anneal-diffusion
only.
range and refuses to extrapolate on the shape axes (implant energy and tilt),
with distinct messages for a dopant/material absent from the database versus a
requested condition outside the tabulated range.
Bindings, examples, tests
ionImplantation(config-driven implant + anneal),pImplantManual,and
pnJunction(2D implant/anneal to a net-doping junction).anneal,ionImplant,implantProfile.Dependencies
Testing
ctestpasses (39/39).